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PD - 91817A
SMPS MOSFET
IRFS9N60A
HEXFET(R) Power MOSFET
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current
l
VDSS
600V
RDS(on) max
0.75
ID
9.2A
GDS
D2Pak
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
9.2 5.8 37 170 1.3 30 5.0 -55 to + 150 300 (1.6mm from case )
Units
A W W/C V V/ns C
Applicable Off Line SMPS Topologies:
l l
Active Clamped Forward Main Switch
Notes through are on page 9
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1
9/23/99
IRFS9N60A
Static @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units Conditions 600 --- --- V VGS = 0V, ID = 250A --- 0.66 --- V/C Reference to 25C, ID = 1mA --- --- 0.75 VGS = 10V, ID = 5.5.A 2.0 --- 4.0 V VDS = VGS, ID = 250A --- --- 25 VDS = 600V, VGS = 0V A --- --- 250 VDS = 480V, VGS = 0V, T J = 125C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 5.5 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 13 25 30 22 1400 180 7.1 1957 49 96 Max. Units Conditions --- S VDS = 25V, ID = 3.1A 49 ID = 9.2A 13 nC VDS = 400V 20 VGS = 10V, See Fig. 6 and 13 --- VDD = 300V --- ID = 9.2A ns --- RG = 9.1 --- R D = 35.5,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 480V, = 1.0MHz --- VGS = 0V, VDS = 0V to 480V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
290 9.2 17
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient (PCB Mounted,steady-state) Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Typ.
--- ---
Max.
0.75 40
Units
C/W
Diode Characteristics
Min. Typ. Max. Units IS
ISM
VSD trr Qrr ton
Conditions D MOSFET symbol --- --- 9.2 showing the A G integral reverse --- --- 37 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 9.2A, VGS = 0V --- 530 800 ns TJ = 25C, IF = 9.2A --- 3.0 4.4 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFS9N60A
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V TOP
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V TOP
10
1
4.7V
20s PULSE WIDTH TJ = 25 C
1 10 100
4.7V
20s PULSE WIDTH TJ = 150 C
1 10 100
0.1 0.1
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
ID = 9.2A
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
2.5
10
TJ = 150 C
2.0
1.5
TJ = 25 C
1
1.0
0.5
0.1 4.0
V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRFS9N60A
2400
20
2000
VGS , Gate-to-Source Voltage (V)
V GS C is s C rss C o ss
= = = =
0V, f = 1M H z C g s + C g d , Cd s S H O R TE D C gd C ds + C gd
ID = 9.2A
400V VDS = 480V VDS = 300V VDS = 120V
16
C , Capacitance (pF )
C iss
1600
C oss
1200
12
8
800
400
C rss
4
0 1 10 100 1000
A
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50
V D S , D rain-to-S ource V oltage (V )
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
10
I D , Drain Current (A)
100
TJ = 150 C
10us 10 100us 1ms 1 10ms
1
TJ = 25 C
0.1 0.2
V GS = 0 V
0.5 0.7 1.0 1.2
0.1
TC = 25 C TJ = 150 C Single Pulse
10 100 1000 10000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFS9N60A
10.0
VDS VGS
RD
8.0
D.U.T.
+
RG
I D , Drain Current (A)
-VDD
6.0
10V
Pulse Width 1 s Duty Factor 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50
0.20 0.1
0.10 0.05 0.02 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1
0.01 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFS9N60A
600
EAS , Single Pulse Avalanche Energy (mJ)
TOP
500
1 5V
BOTTOM
ID 4.1A 5.8A 9.2A
VDS
L
D R IV E R
400
RG
20V tp
D .U .T
IA S
300
+ V - DD
A
0 .0 1
200
Fig 12a. Unclamped Inductive Test Circuit
100
0 25 50 75 100 125 150
V (B R )D SS tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFS9N60A
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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7
IRFS9N60A
D2Pak Package Outline
1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2
4.69 (.1 85) 4.20 (.1 65)
-B 1.3 2 (.05 2) 1.2 2 (.04 8)
1 0.16 (.4 00 ) RE F.
6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F.
1.7 8 (.07 0) 1.2 7 (.05 0)
1
3
3X
1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0)
0 .93 (.03 7 ) 0 .69 (.02 7 ) 0 .25 (.01 0 ) M BAM
0.5 5 (.022 ) 0.4 6 (.018 )
M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 )
NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E
8.89 (.3 50 ) 17 .78 (.70 0)
3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X
Part Marking Information
D2Pak
IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E
PART NUM BER F530S 9 24 6 9B 1M
A
DATE CODE (Y YW W ) YY = Y E A R W W = W EEK
8
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IRFS9N60A
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 63 ) 1 .5 0 (.0 59 ) 4 .1 0 ( .1 6 1) 3 .9 0 ( .1 5 3)
1.60 (.06 3) 1.50 (.05 9) 0 .3 68 (.0 145 ) 0 .3 42 (.0 135 )
F E ED D IRE C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 1.60 (.457 ) 1 1.40 (.449 )
15 .4 2 (.60 9) 15 .2 2 (.60 1)
24.30 (.95 7) 23.90 (.94 1)
TR L
10 .9 0 (.42 9) 10 .7 0 (.42 1) 1.75 (.0 69 ) 1.25 (.0 49 ) 16 .1 0 (.63 4) 15 .9 0 (.62 6) 4 .7 2 (.13 6) 4 .5 2 (.17 8)
F E ED D IR E CT IO N
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941) 4
33 0.00 (14.173) M AX .
60.00 (2.362) M IN.
NO TE S : 1. CO MF OR M S TO EIA-418. 2. CO N TRO LLIN G DIM ENSIO N : MILLIM ET ER . 3. DIM ENS ION MEAS URED @ HU B. 4. INC LUD ES FLAN GE DIS TO RTIO N @ OU TER ED G E.
30.40 (1.197) MA X. 26.40 (1.039) 24.40 (.961)
4
3
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 6.8mH
RG = 25, IAS = 9.2A. (See Figure 12)
ISD 9.2A, di/dt 50A/s, VDD V(BR)DSS,
TJ 150C
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 9/99
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